Indium(III) selenide is a compound of indium and selenium. It has potential for use in photovoltaic devices and it has been the subject of extensive research. The two most common phases, α and β, have a layered structure, while γ is a \"defect wurtzite structure.\" In all, there are five known forms (α, β, γ, δ, κ). The α- β phase transition is accompanied by a change in electrical conductivity. The band-gap of γ-In2Se3 is approximately 1.9 eV. The crystalline form of a sample can depend on the method of production, for example thin films of pure γ-In2Se3 have been produced from trimethylindium, InMe3, and hydrogen selenide, H2Se, using MOCVD techniques.

CAS：12056-07-4
中文别名：硒化铟;
英文别名：diindium triselenide;Indium selenide/ 99.9;
分子式：In2Se3
分子量：466.516
精确质量：469.557
Psa：0.0
Logp：-0.9174

EINECS号：235-016-9
PubChem号：24865178
MDL号：MFCD00016147

密度：5.67g/mLat 25°C(lit.)
熔点：890°C

安全说明：S20/21; S28; S45; S60; S61
危险类别码：R23/25
WGK Germany：3
危险品运输编码：UN 3283 6.1/PG 3
包装等级：III
危险品标志：T; N
危险标志：GHS06, GHS08, GHS09
信号词：Danger
危险性防范说明：P261; P273; P301 + P310; P311; P501
危险性描述：H301; H331; H373; H410

生产方法
通过In-Se熔融体的X射线衍射研究指出有四种二元化合物：In4Se3，InSe，In5Se6，In2Se3。在密闭的真空管中，按正确比例熔化组成元素能制得每种化合物。