Gallium(II) telluride, GaTe, is a chemical compound of gallium and tellurium. There is research interest in the structure and electronic properties of GaTe because of the possibility that it, or related compounds, may have applications in the electronics industry. Gallium telluride can be made by reacting the elements or by metal organic vapour deposition (MOCVD). . GaTe produced from the elements has a monoclinic crystal structure. Each gallium atom is tetrahedrally coordinated by 3 tellurium and one gallium atom. The gallium-gallium bond length in the Ga2 unit is 2.43 Angstrom. The structure consists of layers and can be formulated as Ga24+ 2Te2−. The bonding within the layers is ionic-covalent and between the layers is predominantly van der Waals. GaTe is classified as a layered semiconductor (like GaSe and InSe which have similar structures). It is a direct band gap semiconductor with an energy of 1.65eV at room temperature. A hexagonal form can be produced by low pressure metal organic vapour deposition (MOCVD) from alkyl gallium telluride cubanes e.g. from (t-butylGa( μ3-Te))4. These cubanes are so-called because they have a structure related to C8H8, cubane. The core consists of a cube of eight atoms, four gallium, and four tellurium atoms. Each gallium has an attached t-butyl group and three adjacent tellurium atoms and each tellurium has three adjacent gallium atoms. The hexagonal form, which is closely related to the monoclinic form, containing Ga24+ units, converts to the monoclinic form when annealed at 500 °C.

CAS：12024-14-5
中文别名：碲化镓;
英文别名：
分子式：GaHTe
分子量：198.331
精确质量：199.84
Psa：0.0
Logp：-0.4241

EINECS号：234-690-1
MDL号：MFCD00135536

密度：5.440
熔点：824°C
外观性状：monocliniccrystals
储存条件：

常温密闭，阴凉通风干燥处

稳定性：

常温常压下稳定

避免光，明火，高温

随着温度的降低，GaTe光电导最大值向短波长的方向移动。

水溶解性：Insolubleinwater.
计算化学：

1.疏水参数计算参考值（XlogP）:无

2.氢键供体数量:0

3.氢键受体数量:0

4.可旋转化学键数量:0

5.互变异构体数量:无

6.拓扑分子极性表面积0

7.重原子数量:2

8.表面电荷:0

9.复杂度:2

10.同位素原子数量:0

11.确定原子立构中心数量:0

12.不确定原子立构中心数量:0

13.确定化学键立构中心数量:0

14.不确定化学键立构中心数量:0

15.共价键单元数量:2

更多：

1.性状：由软的容易裂开的薄片所组成的。

2.密度（g/mL,25℃）：5.44

3.相对蒸汽密度（g/mL,空气=1）：未确定

4.熔点（ºC）：824±2

5.沸点（ºC,常压）：未确定

6.沸点（ºC，1mmHg）：未确定

7.折射率：未确定

8.闪点（ºC）：未确定

9.比旋光度（º）：未确定

10.自燃点或引燃温度（ºC）：未确定

11.蒸气压（20ºC）：未确定

12.饱和蒸气压（kPa,60ºC）：未确定

13.燃烧热（KJ/mol）：未确定

14.临界温度（ºC）：未确定

15.临界压力（KPa）：未确定

16.油水（辛醇/水）分配系数的对数值：未确定

17.爆炸上限（%,V/V）：未确定

18.爆炸下限（%,V/V）：未确定

19.溶解性：不溶于水

安全说明：S22; S24/25
危险类别码：R22; R36/37/38
危险品标志：Xn

生产方法
加热熔化按化学计量碲和镓的混合物可制得GaTe。